Experiments were carried out on a high blocking voltage Schottky diode (>2KV) fabricated on an n-type 4H-polytype Silicon Carbide. The sample is low doped in low 10E14 (carrier concentration is 2.4*10E14 cm- 3) and thickness of epitaxial layer is 30um. The substrate is n-type of doping in the mid 10E18 range. Silicon carbide (SiC) is selected because it has a wide bandgap, high thermal conductivity, high breakdown electric field and high electron saturation velocity. Therefore, SiC can be used as high temperature electronics, high power switching and high frequency power generation.I-V and...
Experiments were carried out on a high blocking voltage Schottky diode (>2KV) fabricated on an n-type 4H-polytype Silicon Carbide. The sample is low d...