Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m* = 0.0139m0). These characteristics make InSb quantum wells (QWs) with remotely doped AlxIn1-xSb barriers promising for several novel devices. The promise of InSb QWs for spin transistors has been shown recently by experiments that demonstrate ballistic transport and a large zero- field spin splitting. Mesoscopic magnetoresistors that take ...
Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and t...