The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e., the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e., the forma- tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de- fects" is part of the generalproblern of crystal lattice defects...