III-Nitrides are used in wide range of electrical and optical products and applications including LEDs, LASERs, transistors, etc. However, they suffer from polarization fields when grown crystallographically along the c-direction. These fields result in poor carrier recombination efficiencies in quantum wells and shift in emission wavelength caused by QCSE due to spatial separation of the electron and hole wavefunctions. It is possible to eliminate these effects by growing along the nonpolar directions, so that the polarization fields are normal to the growth direction. However ...