The present work addresses the investigation of high-? dielectrics and their applicability in CMOS-devices, using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase, using organometallic precursors, and their physico-chemical characterization. Furthermore, these material systems are investigated regarding their thermodynamical stability. In the following, MOS-capacitors are fabricated by the selective deposition of gate electrodes made from aluminum, molybdenum, nickel, or titanium-nitride, and characterized regarding...