The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by...
The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm ...
