To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic...
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding o...
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore...
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its l...
These novel techniques and methods allow direct visualization of the concerted quantum tunneling of protons within the hydrogen-bonded network and quantification of the quantum component of a single hydrogen bond at a water-solid interface for the first time.
These novel techniques and methods allow direct visualization of the concerted quantum tunneling of protons within the hydrogen-bonded network and qua...
