Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid...
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation s...
This study focuses on the emerging class of new materials characterized by ultra-fine microstrucures. The NATO ASI which produced this book was an international scientific meeting devoted to a discussion of the mechanical properties and deformation behaviour of materials having grain sizes down to a few nanometers.
This study focuses on the emerging class of new materials characterized by ultra-fine microstrucures. The NATO ASI which produced this book was an int...
