Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on...

A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.

A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.

Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviours of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods.

Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on...