The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis't is the formation of coherent thr- dimensional(3D)islandsduringtheStranski-Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also...
The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum hete...
The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis't is the formation of coherent thr- dimensional(3D)islandsduringtheStranski-Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also...
The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum hete...
