Mikhail Levinshtein Michael Levinshtein Serguei Rumyantsev
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in...
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.
The directions for future research into fluctuation...
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport a...
This volume contains dozens of short and funny true stories about the relations between people working in science, the ways people of science interacted, and their attitudes towards life. On the one hand, these stories are very Russian. On the other hand, the spirit of science displayed is very international. One cannot help feeling it, and it is something that is very difficult to define. This work shows the way this spirit manifests itself, providing amusing examples.
This volume contains dozens of short and funny true stories about the relations between people working in science, the ways people of science interact...
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main...
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche ph...
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SIC devices--power switching Schottky diodes and high temperature MESFETs--are now on the market This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research,
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commerc...
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.
The directions for future research into fluctuation...
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport a...
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. This volume reviews: the growth of SiC substrates; the defects in different SiC polytypes; work on SiC JFETs; and the complex issues important for bipolar devices.
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a ...
