Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy,...
Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant expe...
Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy,...
Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant expe...
Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high vacuum epitaxial growth techniques using particle beams have developed rapidly. This development accelerated when different semiconductor devices with quantum well structures were invented in the 1970s. The important implementation of these structures in devices like quantum-well lasers, high electron mobility tran sistors or superlattice avalanche photodiodes gave added impetus to research work and to increasing production aims. Coincident with...
Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high v...
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots,...
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most...
