In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt. The five articles of the first part are concerned with heterostructure formation. O. P. Pchelyakov and L. V. Sokolov report on controlled growth of nanostructures in the Si-Ge system using an array of modern analytical tools to follow the process in situ. A different method for growing quantum-sized Si-Ge structures is used by Mil'vidskii et al., chemical deposition of hydrides from the vapor. Stresses and misfit dislocations in the resulting heterostructures are...

Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.

This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid- ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are...