Anisotropy, i.e., the dependence of structure and properties on direction in space, is the most striking characteristic of crystals. Anisotropy is a result of the discrete nature of the crystal lattice, and it is the characteristic which distinguishes the crystalline state from another solid state of matter, the amorphous. The anisotropy of the structure and properties of crystals (this can be called their 'internal anisotropy') is also reflected in their external structure, i.e., morphology. The reflection is, however, non-linear: properties such as mechanical hardness ...do not change...

Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or...

In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt. The five articles of the first part are concerned with heterostructure formation. O. P. Pchelyakov and L. V. Sokolov report on controlled growth of nanostructures in the Si-Ge system using an array of modern analytical tools to follow the process in situ. A different method for growing quantum-sized Si-Ge structures is used by Mil'vidskii et al., chemical deposition of hydrides from the vapor. Stresses and misfit dislocations in the resulting heterostructures are...

Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.

This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid- ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are...

For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate- ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Symposium on Crystal Growth was held, and the proceedings of that symposium constitute Volume 9 of Growth of Crystals. The symposium surveyed the advances made in the USSR in those aspects of growth con- cerned mainly with morphology and structure in natural crystals or closely related artificial ones, work which confirmed their relation to E. S....