Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It...
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. T...
Ludwig Boltzmanns bekannte Vorlesung ueber Naturfilosofi von 1903-1906 wird hier zum ersten Mal der ffentlichkeit vorgestellt. Der Autor behandelt grundlegende Konzepte der Mathematik (Zahlenlehre und Geometrie), er diskutiert physikalische Begriffe wie Materie, Raum-Zeit, Kr mmung des Universums, sowie den Farbenraum. Daneben findet man philosophische Betrachtungen, vor allem eine ausf hrliche Auseinandersetzung mit Schopenhauer, und Bemerkungen zu den sch nen K nsten. Der Vorlesung vorangestellt ist eine kurze, reich bebilderte Biographie, ein Essay von S.G. Brush ber Boltzmann und eine...
Ludwig Boltzmanns bekannte Vorlesung ueber Naturfilosofi von 1903-1906 wird hier zum ersten Mal der ffentlichkeit vorgestellt. Der Autor behandelt gru...
IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in...
IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with...