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Kategorie szczegółowe BISAC
 
Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

P. Capper; Peter Capper
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe- family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are...
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, mater...
cena: 805,10
 
Theory of Transport Properties of Semiconductor Nanostructures

Eckehard Schc6ll; Eckehard Schll; Eckehard Scholl
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in...
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extra...
cena: 603,81
 
Infrared Detectors and Emitters: Materials and Devices

Peter Capper; C. T. Elliott
Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at ambient temperature but have disadvantages of insensitivity and slowness. A wide variety of semiconductor photon detectors have been developed and these possess very high sensitivity, high frequency response but have the disadvantage of needing cryogenic cooling, particularly at longer wavelengths. In...
Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The...
cena: 805,10
 
Quantum Semiconductor Devices and Technologies

Tom Pearsall; T. P. Pearsall; Tom Pearsall
stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices,...
stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-a...
cena: 402,53
 
Compound Semiconductors Strained Layers and Devices

S. C. Jain; Suresh Jain; Magnus Willander
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not...
During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady acc...
cena: 603,81
 
High Temperature Electronics

H. L. Hartnagel; M. Willander; Magnus Willander
There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth....
There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability....
cena: 805,10
 
Occupational Therapy for Orthopaedic Conditions

Dina Penrose
This book is written with occupational therapy students in mind, as a guide to newly qualified occupational therapists and for those returning to work after a break in service. Over the years I have been asked many times by newly appointed staffwhether I could recommend a book to prepare them for working with orthopaedic patients. I hope this small volume will fill the gap in the literature on the subject, and that it will be useful as a quick reference book. I hope it mayaiso fall into the hands ofthose in other disciplines and enable them to understand and appreciate the contribution of the...
This book is written with occupational therapy students in mind, as a guide to newly qualified occupational therapists and for those returning to work...
cena: 201,24


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