Fundamentals of Modern VLSI Devices

ISBN-13: 9781108480024 / Angielski / Twarda / 2022 / 700 str.

Yuan Taur; Tak H. Ning

Opis

A thoroughly updated third edition of this classic text, perfect for practical transistor design and in the classroom.

Spis treści

Prefaces; Physical constants and unit conversions; List of symbols; 1. Introduction; 2. Basic device physics; 3. p–n junctions and metal–silicon contacts; 4. MOS capacitors; 5. MOSFETs: long channel; 6. MOSFETs: short channel; 7. Silicon-on-insulator and double-gate MOSFETs; 8. CMOS performance factors; 9. Bipolar devices; 10. Bipolar device design; 11. Bipolar performance factors; 12. Memory devices; References; Index.