Simulation, Fabrication and Characterization of Advanced MOSFETs

ISBN-13: 9783639146004 / Angielski / Miękka / 2009 / 268 str.

Tsung Ming Chung

Opis

The evolution of semiconductor has been growing sincethe first transistor was invented in 1900. Theindustry today is a very important market andworldwide sales for the past years has been growingrapidly and is now a multi-billion industry. In theindustry, the main govern by the "Moores rule". Thislead to the industry answer by the creation ofthe International Roadmap for Semiconductor. In thepast century, semiconductor transistors have movedrapidly and technology nodes have been shrinkingevery two years following Moores rule. Materialshave been moving from bulk silicon to Silicon-on-Insulator wafers. In the past few years, technologists have come to a point where they have recognized that this shrinking phenomenon and high demand for the capability of the transistors in the semiconductor industry is coming to a halt if no new design or technology can be found. In order toovercome this halt, various new ideas have beenproposed; among them the use of asymmetrical channeldoping, multiple-gate MOSFETs and Silicon-on-NothingMOSFETs. In this work, an overview of these ideasare presented via means of simulations andmeasurements where possible.

O autorze

Tsung Ming,CHUNG was born in Kuala Lumpur, Malaysia on 17 June
1976. He graduated with his Bachelor of Engineering in Materials
Engineering at University of Science Malaysia, Master of Science
in Material Science and Engineering in 2001 at Delft University
of Technology, Netherlands and his PhD at the Catholic University
of Louvain, Belgium.