Nanoliquid Processes for Electronic Devices: Developments of Inorganic Functional Liquid Materials and Their Processing

ISBN-13: 9789811329524 / Angielski / Twarda / 2019 / 590 str.

Tatsuya Shimoda

Opis

This book summarizes the results of the research on how to make small electronic devices with high properties by using simple liquid processes such as coating, self-assembling and printing, especially focusing on devices composed of silicon and oxide materials. It describes syntheses and analyses of solution materials, formations of solid thin films from solutions, newly developed patterning methods to make devices, and characterization of the developed devices. In the first part of the book, the research on liquid silicon (Si) materials is described. Because the use of a liquid material is a quite new idea for Si devices, this book is the first one to describe liquid Si materials for electronic devices. Si devices as typified by MOS-FET have been produced by using solid and gas materials. This volume precisely describes a series of processes from material synthesis to device fabrication for those who are interested and are/will be engaged in liquid Si-related work. In the latter part of the book, a general method of how to make good oxide films from solutions and a new imprinting method to make nanosized patterns are introduced. For making oxide films with high quality, the designing of the solution is crucial. If a solution is designed properly, a gel material called "cluster gel" can be formed which is able to be imprinted to form nanosized patterns.The anticipated readers of this book are researchers, engineers, and students who are interested in solution and printing processes for making devices. More generally, this book will also provide guidelines for corporate managers and executives who are responsible for making strategies for future manufacturing processes.

Spis treści

Part I Introduction to liquid process

 

Chapter 1.  Liquid process

1-1 Liquid and its formability

1-2 Categories of liquid process

1-2-1 First step: Conversion way from liquid to solid

1-2-2 Second step: Direct forming process

 

Part II Silicon-based materials

 

Chapter 2.  Guide to silicon-based materials

 

Chapter 3.  Liquid silicon

3-1  CPS

3-1-1 Hydrosilanes and CPS  

3-1-2 Structures of a CPS molecule

3-1-3 Electronic structure of isolated CPS molecule 

3-1-4 Interaction between CPS molecules

3-2  Silicon ink

3-2-1 Silicon ink from CPS

3-2-2 Polymer structure in silicon ink

3-3-3 Doped silicon inks

 

Chapter 4.  Thin film formation by coating 

4-1  Coating process and molecular forces

4-2  The origin of molecular forces

4-2-1 Theory of van der Waals free energy

4-2-2 Measurement of refractive index n

4-2-3 Molecular forces of CPS and silicon compounds  

4-3  Coating of Si ink

4-3-1 General remarks on Si ink coating

4-3-2 Observations of liquid films

4-3-3 Hamaker constant and coating property

4-4  Conversion from polysilane to amorphous Si by pyrolysis

4-4-1 Film appearance during pyrolysis and TG/DTA analysis of Si ink

4-4-2 Raman scattering analysis

4-4-3 FT-IR and SIMS analyses

4-4-4 Properties of amorphous films

 

Chapter 5.  Liquid vapor deposition using liquid silicon (LVD)

5-1 Formation of i, n and p type silicon film by LVD

5-1-1 LVD method and experiment

5-1-2 CPS deposition process

5-1-3 Film properties

5-1-4 Conclusion

5-2  High-quality amorphous silicon film with LVD

5-2-1 New equipment for LVD

5-2-2 Film quality with processing temperature

5-2-3 Film quality with CPS supply speed

5-2-4 Electronic properties of a-Si:H films

5-2-5 Oxygen contamination in a-Si:H film

5-2-6 Summary

 

 

Chapter 6.  Liquid silicon family materials　(1)

-- SiO₂, CoSi₂ and Al from liquid Si --

6-1  SiO₂ fabrication from liquid silicon

6-1-1 Forming SiO₂ films from liquid silicon material

6-1-2 The sole solution-processed SiO₂ film for TFTs

6-1-3 Multi use of solution-processed SiO₂ films for TFTs 

6-1-4 Conclusion

6-2 CoSi₂ fabrication from liquid silicon

6-2-1 Metal silicide from solution

6-2-2 Synthesis of cobalt silicide ink

6-2-3 Formation of CoSi₂ films

6-2-4 TEM observation

6-2-5 Comparison of this process with the conventional ones

6-2-6 More detailed analyses

6-2-7 Conclusions

6-3 Al fabrication via solution process

6-3-1 Triethylamine alane as a precursor of metal Al

6-3-2 Deposition process and reaction  

6-3-3 Analysis of film structure and Al growth manner

6-3-4 Selective deposition of Al

6-3-5 Conclusion

 

Chapter 7.  Liquid silicon family materials　(2)

-- SiC ink and SiC film from liquid Si --

7-1  SiC fabrication via liquid process

7-1-1 Preparation and characterization of SiC precursor polymer

7-1-2 a-SiC film formation and analyses of films

7-1-3 Polymer structure

7-1-4 Polymer-to-ceramic conversion

7-1-5 Conclusion

7-2  Correlation of Si/C stoichiometry between SiC ink and a-SiC film

7-2-1 Polymer and film preparation

7-2-2 Correlation between PSH and a-SiC

7-2-3 Structural properties of an a-SiC film

7-2-4 Optical and electrical properties of an a-SiC film

7-2-5 Conclusion

7-3  n-type a-SiC by coating

7-3-1 Polymer and film preparation and their analyses

7-3-2 Polymer analysis

7-3-3 Thin-film formation

7-3-4 Effect of carbon content on film

7-3-5 Effect of phosphorous concentration on film 

7-3-6 Conclusion

7-4  p-type a-SiC via LVD method

7-4-1 SiC-ink preparation and film deposition

7-4-2 Ink analysis

7-4-3 Film analysis

7-4-4 Discussion

7-4-5 Conclusion

 

Chapter 8.  Nano pattern formation using liquid silicon

8-1 Area selective deposition of silicon family materials

8-1-1 Area selective deposition of silicon using the difference of molecular force

8-1-2 Selective deposition using the reactive difference

8-2 Beam assisted deposition of silicon

8-2-1 Free writing of silicon by FIB-CVD and advantage of CPS for a source material

8-2-2 Experimental

8-2-3 Deposition of silicon patterns

8-2-4 Characterization of the deposited patterns

8-2-5 Summary

8-3 Direct imprinting of silicon using liquid silicon

8-3-1 Nano-imprinting and silicon

8-3-2 Experimental section

8-3-3 Imprinted patterns with Mold 1

8-3-4 Influence of baking temperature on imprinting in Mold 2

8-3-5 Raman and FTIR analyses

8-3-6 Solid-phase crystallization of Si nano-patterns

8-3-7 Discussion

8-3-8 Conclusion

 

Chapter 9.  Development of solar cells using liquid silicon

9-1  Thin film solar cells by coating

9-1-1 Solution preparation and film formation

9-1-2 Characteristics of coated films and their improvement by hydrogen radical treatment

9-1-3 Fabrication of solar cells and their properties

9-1-4 Conclusion

9-2  Thin film solar cells by LVD

9-2-1 Solar cell fabrication using LVD

9-2-2 Solar cell fabrication using the improved LVD

9-2-3 Conclusion

9-3 Application of liquid silicon for HBC type solar cells

9-3-1 Experimental procedure

9-3-2 Thermal stability of LVD a-Si passivation films

9-3-3 Storage stability of c-Si wafers passivated with LVD a-Si films

9-3-4 Feature of LVD a-Si passivation films and advantage of LVD method

9-3-5 Conclusion

 

Chapter 10.  Development of thin film transistors using liquid silicon

10-1 Poly-Si thin film transistor (TFT)

10-1-1 Preparation of liquid silicon　　

10-1-2 Poly-Si TFT

10-1-3 Inkjet printing of a channel

10-1-4 Conclusion

10-1-5 Experimental methods

10-2 Single-grain Si-TFT

10-2-1 Forming single grains from liquid Si　　

10-2-2 Fabrication of single-grain TFTs  

10-2-3 Single-grain TFTs on flexible substrates

10-2-4 Conclusion

10-3 TFT on paper

10-3-1 Poly-Si film from polysilane

10-3-2 TFT fabrication on paper 

10-3-3 Properties of TFT on paper

10-3-4 Further improving as a conclusion

10-3-5 Experimental method 

 

Part III Oxide-based materials

 

Chapter11.  Guide to Oxide-based materials

 

Chapter 12.  Improvement of solid through improved solutions and gels (1)

-- Utilization of Reduction agent and reduced atmosphere PZT --

12-1 Low temperature process of PZT bulk

12-1-1 Introduction and experimental

12-1-2 X-ray diffraction, TEM and XPS

12-1-3 XAFS

12-1-4 Thermal analysis

12-1-5 Discussion

12-1-6 Conclusion

12-1-7 Experimental detail

12-2 Low temperature process of PZT thin film

12-2-1 Introduction

12-2-2 Low temperature process of PZT thin film using reduced atmosphere

12-2-3 Process optimization

12-2-4 PZT film properties

12-2-5 Conclusion

12-2-6 Experimental methods

12-3 Ru and RuO thin film

12-3-1 Introduction

12-3-2 Thermal behaviors and structure of the precursor

12-3-3 Effect of amine content

12-3-4 Effects of amine structure

12-3-5 Properties of the prepared Ru⁰ and RuO₂ thin films

12-3-6 Conclusion

12-3-7 Experimental methods

12-4 Low temperature processed RuO₂ by green laser annealing

12-4-1 Introduction

12-4-2 Green laser irradiation to RuO₂ precursor films

12-4-3 Resistivity of the GLA annealed films

12-4-4 Conclusion

12-4-5 Experimental methods

 

Chapter 13.  Improvement of solid through improved solutions and gels (2)

– The other methods --

13-1Improvement of insulator property of LaZrO by amelioration of solution

13-1-1Introduction

13-1-2 Properties of Films Prepared at Temperatures between 400 °C and 600 °C

13-1-3 TG/DTA analysis.

13-1-4 Mass analysis.

13-1-5 High energy XRD analysis.

13-1-6 XAFS analysis.

13-1-7 Analysis of elemental composition for the annealed films.

13-1-8 Summary of the above analyses.

13-1-9 Conclusions

13-1-10 Experimental methods

13-2 Combustion synthesized ITO

13-2-1 SCS-ITO solutions and thin-film formation

13-2-2 Solution-processed TFTs using SCS-ITO as S&D electrodes

13-3-3 Conclusions

 

Chapter 14.  Direct imprinting of gel (nano-Rheology Printing)

14-1 nano-Rheology Printing (n-RP) of ITO

14-1-1 Introduction to nano-Rheology Printing and its feasibility on ITO

14-1-2 Analysis of the gel material

14-1-3 Changes in the gel film during nano-Rheology Printing

14-1-4 Feature of the nano-Rheology Printing

14-1-5 Conclusion

14-1-6 Experimental details

14-2 Evaluating ITO gels via cohesive energy

14-2-1 Preparation of ITO solution and thin films

14-2-2 Conventional methods for evaluating the state of a gel

14-2-3 New methods for evaluating cohesive energy of a gel

14-2-4 Analytical results using conventional methods

14-2-5 Evaluated cohesive energies of gels

14-2-6 Conclusion

14-3 Origin of the thermal plasticity of ZrO gels

14-3-1 Introduction

14-3-2 Thermal plasticity property and rheology printing for ZrO gels

14-3-3 Structure of ZrO gels

14-3-4 Origin of thermal plasticity of Zr-gels

14-3-5 Conclusion

14-3-6 Experimental methods

14-4 nano-sized patterns of RuLaO by n-RP

14-4-1 Conversion from solutions to solids

14-4-2 Properties of nano-Rheology Printing

14-4-3 Analysis of gels and solutions

14-4-4 n-RP mechanism of Ru-La gel

14-4-5 Conclusion

14-4-6 Experimental methods

 

Chapter 15.  Novel materials proper to liquid process

15-1 High dielectric constant BiNbO material (1)  -- Bi:Nb=1:1 –

15-1-1 BiNbO materials for ceramics capacitors 　

15-1-2 Electrical properties of a new BiNbO material

15-1-3 Improvement of solution for a standard process of the BNO films　

15-1-4 Electric properties of the films from the improved solution

15-1-5 Pyrolysis of the improved solutions and gels

15-1-6 Crystalline identification by XRD and HRTEM

15-1-7 Crystallization pathway of solution-processed BNO

15-1-8 Summary

15-1-9 Experimental details

15-2 High dielectric constant BiNbO material (2)  -- Nb-rich composition --

15-2-1 Preparation of BNO precursor solution

15-2-2 Analysis of equilibrium phases appeared in the film from N50

15-2-3 Relation of the relative dielectric constant and XRD pattern with Nb content

15-2-4 Thermal analysis of N50, N60, and N67 solutions

15-2-5 Relations of the relative dielectric constant and tan δ with the annealing temperature

15-2-6 Conclusions

15-3 New p-type semiconductors

15-3-1 Introduction 

15-3-2 Experimental

15-3-3 Ln-Ru(Ir)-O

15-3-4 Bi(Pb)-Ru(Ir)-O

15-3-5 Summary 

Chapter 16.  Thin film oxide-transistor by liquid process (1)

-- FGT :Ferroelectric Gate Thin Film Transistor --

16-1 Pt and PZT films for FGT 　

16-1-1 Introduction

16-1-2 Experimental procedures

16-1-3 Optimization of Pt/Ti films

16-1-4 Optimization of PZT films

16-1-5 FGT device properties and performance

16-1-6 Conclusion

16-2 All-solution-FGT  Example 1

16-2-1 Introduction

16-2-2 Experimental details

16-2-3 Structural properties

16-2-4 Electrical properties

16-2-5 Conclusion

 

Chapter 17.  Thin film oxide-transistor by liquid process (2)

-- UV and solvothermal treatments for TFT fabrication --

17-1 UV treatment for TFT

17-1-1 Introduction

17-1-2 Experimental details

17-1-3 Thermal behavior of In–Ga–Zn–O solution

17-1-4 Effect of UV/O3 treatment

17-1-5 TFT performance

17-1-6 Summary

17-2 UV treatment for all-liquid-processed TFT Example 2

17-2-1 Introduction

17-2-2 Experimental details

17-2-3 Effects of UV/O₃ treatment and TFT properties

17-2-4 Compositional investigation with applying UV/O₃ treatment

17-2-5 All-solution-processed TFT

17-2-6 Conclusion

17-3 UV and solvothermal treatments for TFTs

17-3-1 Introduction

17-3-2 Experimental methods

17-3-3 Formation of hybrid clusters.

17-3-4 Light absorption analysis of solutions.

17-3-5 Low-temperature UV-annealing of films and their characterization.

17-3-6 Low-temperature fabrication of transistors

17-3-7 Conclusion

17-4 Thermal-UV treatment

17-4-1 Introduction

17-4-2 Experiment details

17-4-3 Result and discussion   

17-4-4 Conclusion

17-5 UV patterning for TFT fabrication

17-5-1 Introduction

17-5-2 UV irradiation and re-dissolving (UV-RD) method

17-5-3 Patterning of InO film

17-5-4 Patterning of component films for a TFT

17-5-5 TFT fabrication by the UV-RD patterning method

17-5-6 Conclusion

 

Chapter 18.  Thin film oxide-transistor by liquid process (3)

-- High-Performance Solution-Processed ZrInZnO TFT --

18-1 ZrInZnO semiconductor film

18-1-1 Introduction

18-1-2 Experimental details

18-1-3 Film characteristics

18-1-4 TFT characteristics

18-1-5 Conclusion

18-2 ZrInZnO-TFTwith polysilazane-based SiO₂ gate insulator

18-2-1 Introduction

18-2-2 Experimental details

18-2-3 Quality of SiO₂ film made from polysilazane and its leakage current mechanizm

18-2-4 TFT using ZrInZnO channel and polysilazane derived SiO₂

18-2-5 Conclusion

18-3 ZrInZnO-TFT by UV treatment: all-liquid-processed TFT  Example 3

18-3-1 Introduction

18-3-2 Experimental details

18-3-3 Preparation of each component layer

18-3-4 Fabrication of all solution-processed TFT with high performance

18-3-5 Conclusion

18-4 All liquid-processed active matrix backplane for EPD

18-4-1 Introduction

18-4-2 Oxide films used in the AM-BP

18-4-3 Fabrication of active matrix TFT backplane (AM-TFT-BP)

18-4-4 Active matrix driven EPD panel – design, panel fabrication and driving method –

18-4-5 Performance of the TFTs and TFT-EPDs

18-4-6 Conclusion

 

Chapter 19.  Device fabrication by n-RP

19-1  Fabrication of FGT and TFT by n-RP

19-1-1 The developed TFTs and their solutions

19-1-2 Solutions for TFT-1

19-1-3 Solutions for TFT-2

19-1-4 TFT Fabrication by nano-Rheology Printing

19-1-5 Conclusion

19-2  High-performance TFT by n-RP

19-2-1 Introduction

19-2-2 Problems of the previously developed TFT and their solutions

19-2-3 TFT structure and fabrication process

19-2-4 Shape, morphology and microstructure of the TFT by n-RP

19-2-5 Electric properties of the TFT by n-RP

19-2-6 Conclusion

19-3  Short channel TFT by n-RP

19-3-1 Introduction

19-3-2 TFT structure and its fabrication

19-3-3 Synthesis of metal oxide precursor solutions

19-3-4 LRO/Pt gate electrode pattern by the nRP

19-3-5 Sub-micron channel length by the nRP

19-3-6 Performance of sub-micron channel length nRP-oxide TFTs

19-3-7 Conclusion

19-4  Active-matrix back plane by n-RP

19-4-1 Introduction

19-4-2 TFT fabrication process and details of n-RP

19-4-3. Solution preparation and others

19-4-4 Development of alignment system for n-RP process

19-4-5 Evaluation of component materials of TFT

19-4-6 Oxide gels patterning by n-RP for TFTs and AM-BP

19-4-7 TFT fabrication using an alignment system

19-4-8 Fabrication of AM-BP

19-4-9 Conclusions and outlook

O autorze

Tatsuya Shimoda

Professor, Japan Advanced Institute of Science and Technology

 

Member of academic society:

                MRS Japan

                Japan Society of Applied Physics (JSAP)

                The Japanese Sol-Gel Society

Society for scientific committee:

                A member of Nanoimprint Technology Study Group in JSAP

                A member of Single-Nanometer Figuration and the Structure-Induced Property Study Group in JSAP