Synthesis and Characterization of nc-Ge using Ion Beam techniques

ISBN-13: 9783845471440 / Angielski / Miękka / 132 str.

Srinivasa Rao Nelamarri; Anand P. Pathak

Opis

The present book deals with the synthesis and characterization of Germanium (Ge) nanocrystals prepared by using various deposition methods, annealing processes and swift heavy ion irradiation. Even though different methods have been used to prepare Ge nanocrystals, researchers are looking for more compact and versatile synthesis methods for various industrial applications. Here, we have used Atom Beam Sputtering (ABS), RF sputtering and ion implantation for initial depositions. Subsequently these as-deposited samples were annealed at various temperatures using normal furnace annealing, rapid thermal annealing (RTA), microwave annealing and irradiated with swift heavy ions of various energies and fluences for crystallization. Advantages and limitations of these techniques have been discussed in detail.

O autorze

Dr Srinivasa Rao Nelamarri is Post doctoral fellow and Prof Anand P Pathak, is Professor of Physics at the University of Hyderabad, India. Their main research interests include Ion Beam studies of nanomaterials: Synthesis, Modification and characterization of semiconductors: Si, Ge as well as III-V and II-VI multi quantum wells and heterostructures.