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The classical method of MOSFET scaling has served us well for more than 30 years. The new era of scaling is one where material and structure innovation are just as important as dimensional scaling. The dimensional scaling leads to short channel effects (SCEs) which are going to severely affect the device performance. The content of this book may be used to analyze the effect of SCEs on the device performance. The book also provides a detailed analysis of potential distribution in the Silicon and Germanium films, which is extremely important for the evaluation of SCEs in a given MOSFET...