Epitaxial Graphene on Silicon Carbide: Modeling, Characterization, and Applications

ISBN-13: 9789814774208 / Angielski / Twarda / 2018 / 248 str.

Gemma Rius; Philippe Godignon

Opis

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc.

Spis treści

1. Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science. 2. Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale. 3. Fabrication of Graphene by Thermal Decomposition of SiC. 4. Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001). 5. Theory of Graphene Growth on SiC Substrate. 6. Epitaxial Graphene on SiC from the Viewpoint of Planar Technology. 7. The Beauty of Quantum Transport in Graphene. Appendix A. Raman Spectroscopy of Graphene on Silicon Carbide. Appendix B. Graphene on SiC: Chemico-Physical Characterization by XPS.