wyszukanych pozycji: 2
Failure analysis of Hot-Electron Effect on power RF N-LDMOS transistor
ISBN: 9783659200625 / Angielski / Miękka / 2012 / 76 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book presents a synthesis of Hot-Electron effects on power RF LDMOS performances, after accelerated ageing tests. This can modify and degrade transistor physical and electrical behaviour. The temperature can limit the lifetime of semiconductors and plays an essential part in the degradation mechanisms. An electric characterization (IC-CAP) has been made, and a thermoelectric model ADS has been...
Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well imp...
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cena:
224,84 zł |
Impact du Transfert Pro Actif sur l'Apprentissage Moteur
ISBN: 9786139563654 / Francuski / Miękka / 2020 / 60 str. Termin realizacji zamówienia: ok. 10-14 dni roboczych. |
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cena:
183,08 zł |