METAL SPINTRONICS: TUNNELING SPECTROSCOPY IN TUNNEL JUNCTIONS : METAL SPINTRONICS: TUNNELING SPECTROSCOPY IN JUNCTIONS WITH MAGNETIC AND SUPERCONDUCTING ELECTRODES

ISBN-13: 9783639105926 / Angielski / Miękka / 2009 / 124 str.

Hyunsoo Yang

Opis

In recent years, materials and devices that are based on the manipulation of the electron''s spin are often termed spintronic. Spintronic devices have already had enormous technological impact as highly sensitive field sensors used in all magnetic data storage devices today. Among recent advances in spintronics, magnetic tunnel junctions have been under intensive study and are poised to become one of the most widely used spintronic devices. Using sputter deposited crystalline tunnel barriers formed from magnesium oxide (MgO) we show remarkably high polarization values, as high as 90%. We show alternative superconducting materials, NbN can be used as a spin detector. We observed that by deliberately introducing small magnetic nanoparticles in the interior of MgO tunnel barriers, there is evidence for Kondo-assisted tunneling in planar magnetic tunnel junctions. Introduction into the tunnel barrier of thin insulating antiferromagnetic oxide layers, we show that such layers can lead to highly asymmetric voltage dependences of tunneling magnetoresistance, and negative values of tunneling magnetoresistance.

O autorze

Hyunsoo Yang earned his M.S. and Ph.D. degrees in the electrical
engineering department of Stanford University in 2003 and 2006,
respectively. Since 2004, he had been at IBM-Stanford Spintronic
Science and Applications Center. He joined the National
University of Singapore in the department of Electrical and
Computer Engineering in 2007.