Giant Magneto-Resistance Devices

ISBN-13: 9783540418191 / Angielski / Twarda / 2002 / 179 str.

Eiichi Hirota; E. Hirota; Hiroshi Sakakima

Opis

This is one of the first application-orientated books on the subject. The main topics are magnetic sensors with high resolutions and magnetic read heads with high sensitivities, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memory (MRAM) with non-volatile non-destructive and radiation-hard characteristics.

Recenzje

From the reviews:

"The book is aimed to give an overview on the applications of the giant magnetoresistance effect (GMR) to electronic devices. ... The book is easy to read, it will be useful for students, engineers and researchers specializing in the field of electronic devices, and also to all researchers interested in applications of new physical effects." (B. P. Vodop 'yanov, Applied Magnetic Resonance, Vol. 26 (3), 2004)

"This is a very informative monograph in an area in which the research literature is well spread and comprehensive reviews relatively sparse. ... The book aims at providing an overview of the present and future electronics applications of GMR and its relatives. ... One excellent feature is the large number of diagrams throughout the entire book. ... I can strongly recommend the book for a coherent and understandable description of a very topical area." (John Cashion, The Physicist, Vol. 40 (5), 2003)

Spis treści

1 Introduction.- 2 Physics of GMR and TMR Devices.- 3 GMR Devices of Metallic Multilayers.- 4 Spin-Valve Devices.- 5 Tunnel-Type GMR (TMR) Devices.- 6 Magnetic Random Access Memory (MRAM).- 7 Other GMR Devices.

Blurb

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.