A Box-Integration/WENO solver for the Boltzmann Transport Equation its Application to High-Speed Heterojunction Bipolar Transistors: Dissertation

ISBN-13: 9783744873727 / Angielski / Miękka / 2017 / 274 str.

Gerald Wedel

O autorze

Gerald Wedel received the M.S. degree in electrical engineering, working on hydrodynamic simulations foradvanced SiGe heterojunction bipolar transistors, in 2008 from the Technische Universität Dresden, Dresden,Germany. He joined the Chair of Electron Devices and Integrated Circuits, Technische Universität Dresden, in 2008 investigating the physical limits of semiconductors devices, focusing on transport modeling and the development of numerical device simulators. In 2013, he has started to develop a deterministic Boltzmanntransport equation (BTE) solver for Si/SiGe and III-V materials, which was the topic of the doctoral thesis he submitted and defended in 2016. In 2016, he also joined the Center of Advancing Electronics Dresden (Cfaed), Technische Universität Dresden, where he is currently working on the development of a deterministic BTE solver for carbon nanotube field-effect transistors.