Polycrystalline wafers from powder Silicon for Solar cells » książka
Polycrystalline wafers from powder Silicon for Solar cells
ISBN-13: 9783659639524 / Angielski / Miękka / 2014 / 100 str.
The book is devoted the experimental analysis of a new way of obtaining of silicon wafers from the powder raw materials intended for use as a base material for solar cells. Before the powder technology of obtaining of silicon wafers has not been considered as an alternative way of obtaining of base wafers for solar cells and substrates for films. The polycrystalline silicon wafers obtained by a method of molding and forming from a powder and also photo-electric structures with the p-n-junction formed on their basis also electro-physical and photo-electrical characteristics of plates and structures and processes of carrying over of a charge in them at photo-excitation are the basic object of research. Electro-physical characteristics of investigated wafers and photo-electric characteristics of structures are measured at the standardized stands. Impurity the structure on the fused sites and on grains boundaries of the poly-Si is defined by spectroscope Cameca. The theoretical analysis of charge carrying process of in the poly-Si structures will be carried out under the well-known theory of physics of semiconductor devices with flat p-n-junction.
The book is devoted the experimental analysis of a new way of obtaining of silicon wafers from the powder raw materials intended for use as a base material for solar cells. Before the powder technology of obtaining of silicon wafers has not been considered as an alternative way of obtaining of base wafers for solar cells and substrates for films. The polycrystalline silicon wafers obtained by a method of molding and forming from a powder and also photo-electric structures with the p-n-junction formed on their basis also electro-physical and photo-electrical characteristics of plates and structures and processes of carrying over of a charge in them at photo-excitation are the basic object of research. Electro-physical characteristics of investigated wafers and photo-electric characteristics of structures are measured at the standardized stands. Impurity the structure on the fused sites and on grains boundaries of the poly-Si is defined by spectroscope Cameca. The theoretical analysis of charge carrying process of in the poly-Si structures will be carried out under the well-known theory of physics of semiconductor devices with flat p-n-junction.
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