Steven H. Voldman is an IEEE Fellow for 'Contributions in ESD Protection in CMOS, Silicon on Insulator and Silicon Germanium Technology'. He has a B.S. engineering science from University of Buffalo (1979), a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT), a second EE degree (engineering degree) from MIT, a M.S. in engineering physics (1986) and a Ph.D. EE (1991) from University of Vermont under IBM's Resident Study Fellow Program.
Since 1984, Voldman has provided experimental research, invention, chip design integration, circuit design, customer support and strategi...