Dr. Steven H. Voldman received his B. S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T.; MS Engineering Physics (1986) and Ph.D. EE (1991) from the University of Vermont under IBM Resident Study Fellow program. At M.I.T., he worked as a member of the M.I.T. Plasma Fusion center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability/device engineer, his work included pioneering work in bipolar/CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechani...