Zno Thin-Film Transistors for Cost-Efficient Flexible Electronics

ISBN-13: 9783319725550 / Angielski / Twarda / 2018 / 179 str.

Fabio Fedrizzi Vidor; Gilson Inacio Wirth; Ulrich Hilleringmann

Spis treści

Chapter 1.Introduction.- Chapter 2.Fundamentals.- Chapter 3.Integration.- Chapter 4. Zinc Oxide Transistors.- Chapter 5.Electronic Circuits.- Chapter 6.Improvements.- Chapter 7.Conclusion and Future Perspectives.

O autorze

Fábio Fedrizzi Vidor received in 2011 the B.Sc. degree in Electrical Engineering and in 2012 the M.Sc. degree in Microelectronics, both from the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2017, he received the Dr.-Ing. degree in Electrical Engineering from the Paderborn University, Germany. He is currently a postdoctoral researcher at the Federal University of Rio Grande do Sul (UFRGS), Brazil. In 2009, he participated in the micro and nanoelectronic cooperation program at the State University of New York at Buffalo (SUNY), USA. In 2010 and 2011, he worked in the Prototyping and Testing Laboratory at UFRGS (LAPROT-UFRGS), developing transistor characterization methods and working at the performance enhancement of ZnO transistors in cooperation with the Paderborn University, Germany. In 2012, as a research assistant in the Post-Graduate Program on Microelectronic (PGMICRO-UFRGS), he worked on ZnO TFT reliability. From 2013 to 2017, he worked as a research assistant at the Paderborn University in the field of complementary TFTs with (in)organic semiconductors. His current research interests include fabrication, characterization, modeling and reliability of ZnO based and complementary TFTs and flexible electronics..

Gilson I. Wirth received the B.S.E.E and M.Sc. degrees from the Universidade Federal do Rio Grande do Sul, Brazil, in 1990 and 1994, respectively. In 1999 he received the Dr.-Ing. degree in Electrical Engineering from the University of Dortmund, Dortmund, Germany. He is currently a professor at the Electrical Engineering Department at the Universidade Federal do Rio Grande do Sul - UFRGS (since January 2007) , where he was the head of graduate and undergraduate courses. From July 2002 to December 2006 he was professor and head of the Computer Engineering Department, Universidade Estadual do Rio Grande do Sul (UERGS). His research work is focused on reliability and yield of MOS devices and circuits, including low-frequency noise, bias temperature instability (BTI), radiation effects, and design techniques to improve yield and reliability. He has stablished successful collaborative work with different companies and research groups in Europe, North and South America. 

Ulrich Hilleringmann has been Professor of the Sensor Technology Group, Paderborn University, in Paderborn, Germany since 1999. He studied physics at University of Dortmund from 1978 to 1984 and subsequently joined the Fraunhofer Institute for Microelectronics and Systems, Duisburg, for two years. Thereafter he changed to the Electrical Engineering Department at University of Dortmund. There he did his PhD in 1988 and became assistant professor in 1994. In 1999 he got professor in Paderborn. Since 1984 his main interests include microelectronics, processing of semiconductor devices and microelectromechanical systems. His research work focuses on short channel field effect transistors, flexible electronics using organic or nanoparticle semiconductors, thermoelectric generators, surface acoustic wave sensors, RFID systems, and integrated optics on silicon.

Blurb

This book describes the integration, characterization and analysis of cost-efficient thin-film transistors (TFTs), applying zinc oxide as active semiconductors.  The authors discuss soluble gate dielectrics, ZnO precursors, and dispersions containing nanostructures of the material, while different transistor configurations are analyzed with respect to their integration, compatibility, and device performance.  Additionally, simple circuits (inverters and ring oscillators) and a complementary design employing (in)organic semiconducting materials are presented and discussed.  Readers will benefit from concise information on cost-efficient materials and processes, applied in flexible and transparent electronic technology, such as the use of solution-based materials and dispersion containing nanostructures, as well as discussion of the physical fundamentals responsible for the operation of the thin-film transistors and the non-idealities of the device.