Variation-Aware Advanced CMOS Devices and Sram

ISBN-13: 9789401775953 / Angielski / Twarda / 2016 / 140 str.

Changhwan Shin

Opis

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

Spis treści

1 Introduction: Barriers Preventing CMOS Device Technology from Moving Forward.

 

2 Understanding of Process-Induced Random Variation.

2.1 Line Edge Roughness (LER).

2.2 Random Dopant Fluctuation (RDF).

2.3 Work-function Variation (WFV).

 

3 Variation-Aware Advanced CMOS Devices.

3.1 Tri-gate MOSFET.

3.2 Quasi-Planar Trigate (QPT) Bulk MOSFET.

3.3 Tunnel FET (TFET).

 

4 Applications in Static Random Access Memory (SRAM).

O autorze

Prof. Changhwan Shin is an Assistant Professor in School of Electrical and Computer Engineering in University of Seoul. Prof. Shin is a graduate of Korea University (BE) and University of California Berkeley (Ph.D). Also, he is Technical Committee Members for IEEE SOI Conference and European Solid-State Device Research Conference (ESSDERC). His research activities cover Electronic Devices and Integrated Circuits; Advanced electronic device architecture for various types of System-on-Chip(SoC) memory and logic devices/ All-in-one Variability Analysis for Nanometer-scale Electronic Devices/ Post-Silicon Technology (CNT, Graphene) & Bio-applications/ Device-and-Circuit Co-optimization: "Low-Level" Digital/Analog Circuit Design Methodology Development/ Programmable Chip Development using Advanced Electronic Devices.