Thermal Management of Gallium Nitride Electronics

ISBN-13: 9780128210840 / Angielski / Miękka / 2022

Marko Tadjer; Travis J. Anderson

Spis treści

1. Heating issues in wide-bandgap semiconductor devices 2. First principles thermal transport in GaN and related materials 3. Heat transport in polycrystalline diamond from the meso to the nano scale 4. Understanding Thermal Transport across Interfaces 5. Upper limits to thermal conductance across gallium nitride interfaces: predictions and measurements 6. AlGaN/GaN HEMT Device Physics and Electro-Thermal Modeling 7. Modeling of thermal phenomena in GaN devices 8. Device-level modeling and simulation of AlGaN/GaN HEMTs 9. Gate Resistance Thermometry: an electrical thermal characterization technique 10. Thermal characteristics of superlattice castellated FETs 11. The transient Thermoreflectance Approach for high-resolution temperature mapping of GaN devices 12. Fundamentals of CTE-matched QST substrate technology 13. Reduced-Stress Nanocrystalline Diamond for Heat Spreading in Electronic Devices 14. GaN-on-diamond materials and device technology: a review 15. Three-Dimensional Integration of Diamond and GaN 16. Room-Temperature Bonded Thermally Conductive Semiconductor Interfaces 17. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates 18. Microfluidic cooling for GaN electronic devices 19. Thermal Effects in Ga2O3 Rectifiers and MOSFETs-Borrowing from GaN

O autorze

Dr. Marko J. Tadjer is a civilian staff scientist at the U.S. Naval Research Laboratory, Washington DC. He received a Ph.D. in Electrical Engineering from the University of Maryland, College Park in 2010, a Master of Science in Electrical Engineering from Duke University in 2004, and undergraduate degrees in Electrical and Computer Engineering from the University of Arkansas in 2002. His research in power devices focuses on the integration of materials with attractive properties such as diamond with more mature GaN and SiC technology, as well as exploring novel oxides such as Ga2O3 for power electronics applications. Travis J. Anderson is a civilian staff scientist at the U.S. Naval Research Laboratory. He received a Ph.D. in Chemical Engineering from the University of Florida in 2008, and a B.S. in Chemical Engineering from the Georgia Institute of Technology in 2004.