The Mocvd Challenge: A Survey of Gainasp-Inp and Gainasp-GAAS for Photonic and Electronic Device Applications, Second Edition

ISBN-13: 9781439806982 / Angielski / Twarda / 2010 / 799 str.

Manijeh Razeghi

Opis

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP InP, GaInAsP GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world s first InP/GaInAs superlattice that was fabricated by the author this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors. Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD. "

MOCVD is a widely used technique in research and industry. The quantum-semiconductor structures grown by MOCVD will continue to be increasingly integrated into the exciting world of organic materials and biomaterials. Written by a leader in the field, this two-volume set provides complete coverage of the MOCVD challenge. The first volume presents a state-of-the art review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates. The second volume focuses on photonic and electronic device applications of GalnAsP-GaAs.

Recenzje

… a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
—SciTech Book News, February 2011

Spis treści

Introduction to Semiconductor Compounds. Growth Technology. In situ Characterization during MOCVD. Ex situ Characterization Techniques. MOCVD Growth of GaAs Layers. Growth and Characterization of the GaInP–GaAs System. Optical Devices. GaAs-Based Lasers. GaAs-Based Heterojunction Electron Devices Grown by MOCVD. Optoelectronic Integrated Circuits (OEICs). InP–InP System: MOCVD Growth, Characterization and Applications. GaInAs–InP System: MOCVD Growth, Characterization and Applications. GaInAsP–InP System: MOCVD Growth, Characterization, and Applications. MOCVD Growth, Characterization and Applications of III–V Semiconductor Strained Heterostructures. MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates and their Applications. Optoelectronic Devices Based on Quantum Structures. Appendices. Index.

O autorze

Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.