Technology Computer Aided Design: Simulation for VLSI Mosfet

ISBN-13: 9781138075757 / Angielski / Miękka / 2017 / 462 str.

Chandan Kumar Sarkar

Opis

MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and low-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance.

Spis treści

Introduction to Technology CAD. Basic Semiconductor and MOS Physics. Review of Numerical Methods for TCAD. Device Simulation Using ISE-TCAD. Device Simulation Using Silvaco ATLAS Tool. Study of Deep Submicron VLSI MOSFETs through TCAD. MOSFET Characterization for VLSI Circuit Simulation. Process Simulation of a MOSFET using TSUPREM-4 and MEDICI.

O autorze

Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.