Synthesis, Characterization of high k materials, Device Characteristics

ISBN-13: 9783659711909 / Angielski / Miękka / 2015 / 188 str.

Bikshalu Kalagadda

Opis

This book is about the synthesis,Characterization of high k nano materials like La2o3 ,LaAlo3 and simulation of device characteristics for future CMOS applications.Synthesis and characterization of La2O3 and LaAlO3 materials by chemical methods like combustion method, pechini method and gelation precipitation method. (ii) Simulation of device characteristics for La2O3 and LaAlO3 materials,for Metal Oxide Semiconductor Field Effect Transistors is done by Quantum wise and Nanohub simulation tools. Also design of Inverter, NAND, NOR gates are investigated for High K dielectric La2O3 gate materials (K=27) using Arizona State Universities Predictive Technology Models.

O autorze

Dr. K. Bikshalu completed his B.Tech in ECE and M.Tech with the specialization of DECE and was awarded his Ph.D from JNT University Hyderabad, India. He was appointed as Assistant Professor in department of ECE at Kakatiya University, Warangal, India in the year 2008. He guided many B.Tech. and M.Tech. Projects in his service.