Study of the Photovoltaic Behavior of Coaxial Nanowires

ISBN-13: 9783659881367 / Angielski / Miękka / 2016 / 132 str.

Sameh Abdellatif; Khaled Kirah; Hani Ghali Wagdy Anis

Opis

This book investigates the radial pn junction design for vertical-aligned nanowire (NW) PV devices. First, the performance of Silicon (Si), an indirect band-gap semiconductor, and Gallium Arsenide (GaAs), a direct band-gap semiconductor as the NW material are compared. The fill factor, the power conversion efficiency, the optimum device length, the spectrum of the quantum efficiency and the sensitivity to temperature variations are investigated. Moreover, other materials like germanium (Ge), gallium indium phosphate (GaInP) and gallium indium Arsenide (GaInAs) are tried as the NW material. The array effects for nanowires of each material alone then of arrays of mixed types are simulated

O autorze

Sameh O. Abdellatif: received B.S. degree in electronics and communication engineering from ASU, Cairo, Egypt, 2009 and MSc. degree from the same university, 2012. Currently, he is enrolled as an assistant lecturer in the Electrical department in BUE, Egypt. In addition, he is completing his PhD in the University of Duisburg-Essen funded by DAAD.