ISBN-13: 9783838323336 / Angielski / Miękka / 2010 / 176 str.
ISBN-13: 9783838323336 / Angielski / Miękka / 2010 / 176 str.
This book presents the results of structural studies of InGaN, AlGaN, InAlN, and rare-earth doped (Tm, Er and Eu) GaN by Extended X-ray Absorption Fine Structure; optical characterisation of RE-doped GaN by cathodoluminescence, photoluminescence and photoluminescence excitation spectroscopies. First attempts to identify the lattice location of emitting centres in nitride semiconductors using X-ray Excited Optical Luminescence for EXAFS detection are also presented.