Strain-Engineered Mosfets

ISBN-13: 9781138075603 / Angielski / Miękka / 2017 / 320 str.

Maiti, C.K. (Indian Institute of Technology, Kharagpur)|||Maiti, T.K. (Indian Institute of Technology, Kharagpur)

Opis

This book brings together new developments in the area of strain-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors.

Recenzje

"… an immensely useful book for the researcher in this field and even for some like me who do not work exactly in this area. Any scientist interested in strain modulation of device properties will value this book."
—Supriyo Bandyopadhyay, Virginia Commonwealth University

"… a timely bridge from the conventional MOSFETs to advanced strain-engineered MOSFETs to non-classical multiple gate devices to FinFETs. … I strongly recommend this book."
—Dr. Enrique MIRANDA, Universitat Autònoma de Barcelona

Spis treści

Introduction. Substrate-Induced Strain Engineering in CMOS Technology. Process-Induced Stress Engineering in CMOS Technology. Electronic Properties of Strain-Engineered Semiconductors. Strain-Engineered MOSFETs. Noise in Strain-Engineered Devices. Technology CAD of Strain-Engineered MOSFETs. Reliability and Degradation of Strain-Engineered MOSFETs. Process Compact Modelling of Strain-Engineered MOSFETs. Process-Aware Design of Strain-Engineered MOSFETs. Conclusions. Index.

O autorze

C K Maiti (Author) ,  T K Maiti (Indian Institute of Technology, Kharagpur, India Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur Indian Institute of Technology, Kharagpur) (Author)