Spin Electronics

ISBN-13: 9781402018022 / Angielski / Twarda / 2003 / 198 str.

David D. Awschalom; Robert A. Buhrman; James M. Daughton

Opis

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Spis treści

Preface. Foreword. Table of Contents. List of Figures. Executive Summary. 1. Spin Electronics-Is It the Technology of the Future? S. von Molnár. Introduction. This Study. Spin Electronics: A Significant Field of Scientific Inquiry? Conclusions. Acknowledgements. References. 2. Materials for Semiconductor Spin Electronics; S. von Molnár. Discussion. Conclusions. References. 3. Fabrication and Characterization of Magnetic Nanostructures; M.L. Roukes. Background and Overview. Fabrication of Magnetic Nanostructures. Characterization of Magnetic Nanostructures. Near-term Perspective and Interim Conclusions. References. 4. Spin Injection, Spin Transport and Spin Transfer; R.A. Buhrman. Background and Overview. Research Activities in Japan. Research Activities in Europe. Concluding Comments. References. 5. Optoelectronic Manipulation of Spin in Semiconductors; D.D. Awschalom. Introduction. Optoelectronic Manipulation of Spin Coherence in Semiconductors and Nanostructures. Spin Transport in Heterostructures and Coherent Spintronics. Role of Disorder in Spin-based Electronics. Magnetic Doping in Semiconductor Heterostructures: Integration of Magnetics and Electronics. Optical Manipulation of Nuclear Spins. Artificial Atoms in the Solid State: Quantum Dots. Outlook and General Conclusions. References. 6. Magnetoelectronic Devices; J.M. Daughton. Overview of Issues for Magnetoelectronic Devices. Salient Features of Magnetoelectronics Research in Europe and Japan. Comparison of Japan and Europe Research with that in the United States. References. Appendices: Appendix A. Biographies of Team Members. Appendix B. SiteReports-Europe. Appendix C. Site Reports - Japan. Appendix D. Highlights of Recent U.S. Research and Development Activities. Appendix E. Glossary. Appendix F. Index of Sites.