Silicon Carbide: Materials, Processing and Devices

ISBN-13: 9781591690238 / Angielski / Twarda / 2003 / 416 str.

Zhe, Chuan Feng

Opis

Silicon carbide (SiC) was predicted to quickly replace Silicon in the early 1950s because of its excellent comparative material properties. Advanced SiC crystal growth technology developed in the 1980s has revitalized the investigation of SiC. SiC optoelectronic devices still have attractive features and unique applications. For example, Silicon carbide is the semiconductor of choice for new applications including electric-power devices, high-frequency devices, high-temperature devices, and radiation -resistant devices. It is important, therefore, to stimulate further investigation of SiC for other possible optoelectronic applications. The book is organized for a wide range of audiences and covers each of the critical aspects of SiC science and technology. Each chapter, written by experts in the field, reviews work in the field, discusses progress made by different groups, and suggests further work needed. This book is a reference not only for experts, but also for newcomers and postgraduates with a background in materials science, electrical engineering and applied physics. The topics covered in the book include: epitaxial and crystal growth, characterization of surface and epilay

This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

Spis treści

Preface

Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent
progress -
-- T. Kimoto and H. Matsunami* (Kyoto University)
(1) Introduction
(2) Step-controlled Epitaxy of SiC
2.1 Chemical vapor deposition
2.2 Step-controlled epitaxy
2.3 Surface morphology
(3) Growth mechanism of step-controlled epitaxy
3.1 Rate-determining process
3.2 Off-angle dependence of growth rate
3.3 Temperature dependence of growth rate
3.4 Prediction of step-flow growth condition
3.4.1 Surface diffusion model
3.4.2 Desorption flux
3.4.3 Critical supersaturation ratio
3.4.4 Critical growth conditions
3.4.5 Surface diffusion length
3.4.6 Prediction of growth mode
(4) Behaviors of steps in SiC epitaxy
4.1 Nucleation and step motion
4.2 Step bunching
(5) Characterization of epitaxial layers
5.1 Structural characterization
5.2 Optical characterization
5.3 Electrical characterization
(6) Doping of impurities
6.1 Donor doping
6.2 Acceptor doping
(7) Recent progress
7.1 Practical epitaxial growth
7.2 Epitaxial growth on (11-20)
(8) Concludions
References

Chapter 2 Surface characterization of 6H-SiC reconstructions
-- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE*
(National University of Singapore)
1. INTRODUCTION
2. Sample preparation methods for characterization of surface reconstruction
3. Reflection High Energy Electron Diffraction (RHEED)
3.1 RHEED system set-up
3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001)
3.3 6H-SiC (0001)-(1´1) reconstruction
3.4 6H-SiC (0001)-(3´3) reconstruction
3.5 6H-SiC(0001)-(6×6) reconstruction
3.6 6H-SiC(0001)-(Ö3´Ö3R ) reconstruction
3.7 1´1 graphite-R on 1´1 SiC
3.8 RHEED Rocking beam analysis
4. Scanning Tunneling Microscopy (STM)
4.1 Surface Morphological Evolution of 6H-SiC(0001)
4.2 6H-SiC (0001)-(3&

O autorze

Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.