Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

ISBN-13: 9781032061610 / Angielski / Twarda / 2021 / 290 str.

D. Nirmal; J. Ajayan; Patrick Fay

Opis

The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.

Spis treści

CHAPTER-1: An Introduction to Nanoscale CMOS Technology Transistor: A Future PerspectiveKumar Prasannajit. Pradhan CHAPTER-2: High Performance Tunnel Field Effect Transistor (TFET) for Future Low Power ApplicationsRibu Mathew, Ankur B, and Abhishek Kumar Upadhyay CHAPTER-3: Ultra Low Power III-V Tunnel Field Effect TransistorsJ. Ajayan and D. Nirmal CHAPTER-4: Performance Analysis of Carbon Nanotube and Graphene Tunnel Field Effect TransistorsK. Ramkumar, Singh Rohitkumar Shailendra, V N Ramakrishnan CHAPTER-5: Characterization of Silicon FinFETS Under Nanoscale DimensionsRock-Hyun Baek and Jun-Sik Yoon CHAPTER-6: Germenium or SiGe FinFETs for Enhanced Performance in Low Power Applications Nilesh Kumar Jaiswal and V. N. Ramakrishnan CHAPTER-7: Switching Performance Analysis of III-V FinFETs Arighna Basak, Arpan Deyasi, Kalyan Biswas, Angsuman Sarkar CHAPTER-8: Negative Capacitance Field Effect Transistors to Address the Fundamental Limitations In Technology ScalingHarsupreet Kaur CHAPTER-9: Recent Trends in Compact Modeling of Negative Capacitance Field Effect TransistorsShubham Tayal, Shiromani Balmukund Rahi,Jay Prakash Srivastava, Sandip Bhattacharya CHAPTER-10: Fundamentals of 2D Materials Ganesan Anushya, Rasu Ramachandran, Raj Sarika, Michael Benjamin CHAPTER-11: Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials In Field Effect Transistor (FET) Devices For Low Power ApplicationsR. Sridevi and J. Charles Pravin