Semiconductor Basics: A Qualitative, Non-Mathematical Explanation of How Semiconductors Work and How They Are Used

ISBN-13: 9781119702306 / Angielski / Twarda / 2020 / 320 str.

George Domingo

Recenzje

Semiconductor Basics is an excellent beginner's guide on the average semiconductors used in many projects, explaining the usage in detail and other important data one must know. It's a perfect way to get a good selection of many different types. Creating a perfect guide for those in the engineering career field - TECH Fashion Trends

Spis treści

Acknowledgements xiiiIntroduction xv1 The Bohr Atom 1Objectives of This Chapter 11.1 Sinusoidal Waves 11.2 The Case of the Missing Lines 31.3 The Strange Behavior of Spectra from Gases and Metals 41.4 The Classifications of Basic Elements 51.5 The Hydrogen Spectrum Lines 51.6 Light is a Particle 71.7 The Atom's Structure 81.8 The Bohr Atom 101.9 Summary and Conclusions 13Appendix 1.1 Some Details of the Bohr Model 14Appendix 1.2 Semiconductor Materials 16Appendix 1.3 Calculating the Rydberg Constant 162 Energy Bands 19Objectives of This Chapter 192.1 Bringing Atoms Together 192.2 The Insulator 222.3 The Conductor 232.4 The Semiconductor 242.5 Digression: Water Analogy 272.6 The Mobility of Charges 272.7 Summary and Conclusions 28Appendix 2.1 Energy Gap in Semiconductors 29Appendix 2.2 Number of Electrons and the Fermi Function 293 Types of Semiconductors 35Objectives of This Chapter 353.1 Semiconductor Materials 353.2 Short Summary of Semiconductor Materials 363.2.1 Silicon 363.2.2 Germanium 373.2.3 Gallium Arsenide 393.3 Intrinsic Semiconductors 393.4 Doped Semiconductors: n-Type 403.5 Doped Semiconductors: p-Type 433.6 Additional Considerations 453.7 Summary and Conclusions 47Appendix 3.1 The Fermi Levels in Doped Semiconductors 48Appendix 3.2 Why All Donor Electrons go to the Conduction Band 504 Infrared Detectors 51Objectives of This Chapter 514.1 What is Infrared Radiation? 514.2 What Our Eyes Can See 544.3 Infrared Applications 554.4 Types of Infrared Radiation 584.5 Extrinsic Silicon Infrared Detectors 584.6 Intrinsic Infrared Detectors 624.7 Summary and Conclusions 63Appendix 4.1 Light Diffraction 64Appendix 4.2 Blackbody Radiation 665 The pn-Junction 69Objectives of This Chapter 695.1 The pn-Junction 695.2 The Semiconductor Diode 725.3 The Schottky Diode 765.4 The Zener or Tunnel Diode 775.5 Summary and Conclusions 81Appendix 5.1 Fermi Levels of a pn-Junction 81Appendix 5.2 Diffusion and Drift Currents 82Appendix 5.3 The Thickness of the Transition Region 83Appendix 5.4 Work Function and the Schottky Diode 856 Other Electrical Components 89Objectives of This Chapter 896.1 Voltage and Current 896.2 Resistance 906.3 The Capacitor 936.4 The Inductor 966.5 Sinusoidal Voltage 986.6 Inductor Applications 996.7 Summary and Conclusions 102Appendix 6.1 Impedance and Phase Changes 1027 Diode Applications 105Objectives of This Chapter 1057.1 Solar Cells 1057.2 Rectifiers 1067.3 Current Protection Circuit 1097.4 Clamping Circuit 1097.5 Voltage Clipper 1107.6 Half-wave Voltage Doubler 1117.7 Solar Cells Bypass Diodes 1137.8 Applications of Schottky Diodes 1137.9 Applications of Zener Diodes 1147.10 Summary and Conclusions 115Appendix 7.1 Calculation of the Current Through an RC Circuit 1158 Transistors 117Objectives of This Chapter 1178.1 The Concept of the Transistor 1178.2 The Bipolar Junction Transistor 1188.3 The Junction Field-effect Transistor 1248.4 The Metal Oxide Semiconductor FET 1288.5 Summary and Conclusions 132Appendix 8.1 Punch Trough 1349 Transistor Biasing Circuits 135Objectives of This Chapter 1359.1 Introduction 1359.2 Emitter Feedback Bias 1369.3 Sinusoidal Operation of a Transistor with Emitter Bias 1409.4 The Fixed Bias Circuit 1449.5 The Collector Feedback Bias Circuit 1479.6 Power Considerations 1489.7 Multistage Transistor Amplifiers 1499.8 Operational Amplifiers 1509.9 The Ideal OpAmp 1539.10 Summary and Conclusions 155Appendix 9.1 Derivation of the Stability of the Collector Feedback Circuit 15610 Integrated Circuit Fabrication 159Objectives of This Chapter 15910.1 The Basic Material 15910.2 The Boule 16010.2.1 The Czochralski Method 16010.2.2 The Flow-zone Method 16110.3 Wafers and Epitaxial Growth 16210.4 Photolithography 16210.5 The Fabrication of a pnp Transistor on a Silicon Wafer 16310.6 A Digression on Doping 16610.6.1 Thermal Diffusion 16610.6.2 Implantation 16710.7 Resume the Transistor Processing 17010.7.1 The Contacts 17010.7.2 Metallization 17010.7.3 Multiple Interconnects 17110.8 Fabrication of Other Components 17210.8.1 The Integrated Resistor 17210.8.2 The Integrated Capacitor 17310.8.3 The Integrated Inductor 17310.9 Testing and Packaging 17410.10 Clean Rooms 17810.11 Additional Thoughts About Processing 18010.12 Summary and Conclusions 181Appendix 10.1 Miller Indices in the Diamond Structure 18311 Logic Circuits 187Objectives of This Chapter 18711.1 Boolean Algebra 18711.2 Logic Symbols and Relay Circuits 18811.3 The Electronics Inside the Symbols 19011.3.1 Diode Implementation 19111.3.2 CMOS Implementation 19211.4 The Inverter or NOT Circuit 19211.5 The NOR Circuit 19311.6 The NAND Circuit 19511.7 The XNOR or Exclusive NOR 19611.8 The Half Adder 19711.9 The Full Adder 19811.10 Adding More than Two Digital Numbers 19811.11 The Subtractor 19911.12 Digression: Flip-flops, Latches, and Shifters 20111.13 Multiplication and Division of Binary Numbers 20311.14 Additional Comments: Speed and Power 20411.15 Summary and Conclusions 206Appendix 11.1 Algebraic Formulation of Logic Modules 206Appendix 11.2 Detailed Analysis of the Full Adder 207Appendix 11.3 Complementary Numbers 208Appendix 11.4 Dividing Digital Numbers 209Appendix 11.5 The Author's Symbolic Logic Machine Using Relays 21012 VLSI Components 211Objectives of This Chapter 21112.1 Multiplexers 21112.2 Demultiplexers 21312.3 Registers 21412.4 Timing and Waveforms 21612.5 Memories 21812.5.1 Static Random-access Memory 21912.5.2 Dynamic Random-access Memory 22212.5.3 Read-only Memory 22412.5.4 Programable Read-only Memory 22512.6 Gate Arrays 22712.7 Summary and Conclusions 227Appendix 12.1 A NAND implementation of a 2 to 1 MUX 22813 Optoelectronics 229Objectives of This Chapter 22913.1 Photoconductors 22913.2 PIN Diodes 23013.3 LASERs 23113.3.1 Laser Action 23113.3.2 Solid-state Lasers 23413.3.3 Semiconductor LASERs 23413.3.4 LASER Applications 23713.4 Light-emitting Diodes 23813.5 Summary and Conclusions 240Appendix 13.1 The Detector Readout 24014 Microprocessors and Modern Electronics 243Objectives of This Chapter 24314.1 The Computer 24314.1.1 Computer Architecture 24314.1.2 Memories 24414.1.3 Input and Output Units 24614.1.4 The Central Processing Unit 24614.2 Microcontrollers 24814.3 Liquid Crystal Displays 24914.3.1 Liquid Crystal Materials 24914.3.2 Contacts 25114.3.3 Color Filters 25114.3.4 Thin-film Transistors 25114.3.5 The Glass 25314.3.6 Polarizers 25314.3.7 The Source of Light 25414.3.8 The Entire Operation 25414.4 Summary and Conclusions 255Appendix 14.1 Keyboard Codes 25615 The Future 257Objectives of This Chapter 25715.1 The Past 25715.2 Problems with Silicon-based Technology 26215.3 New Technologies 26515.3.1 Nanotubes 26515.3.2 Quantum Computing 26615.3.3 Biocomputing 26815.4 Silicon Technology Innovations 26815.4.1 Process Improvements 26915.4.2 Vertical Integration 26915.4.3 The FinFET 27115.4.4 The Tunnel FET 27115.5 Summary and Conclusions 272Epilogue 273Appendix A Useful Constants 275Appendix B Properties of Silicon 277Appendix C List of Acronyms 279Additional Reading and Sources 285Index 289

O autorze

George Domingo, PhD, has worked in consulting and management, and as a teacher. He was Professor of Electrical Engineering - Solid State, Networks and Electronics at Northrop University, USA, for 11 years and spent 31 years in various roles in infrared systems for industry and for NASA's astronomical observatories.