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Reliability Physics and Engineering: Time-To-Failure Modeling

ISBN-13: 9783319936826 / Angielski / Twarda / 2019 / 463 str.

J. W. McPherson
Reliability Physics and Engineering: Time-To-Failure Modeling McPherson, J. W. 9783319936826 Springer - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Reliability Physics and Engineering: Time-To-Failure Modeling

ISBN-13: 9783319936826 / Angielski / Twarda / 2019 / 463 str.

J. W. McPherson
cena 442,79
(netto: 421,70 VAT:  5%)

Najniższa cena z 30 dni: 424,07
Termin realizacji zamówienia:
ok. 22 dni roboczych.

Darmowa dostawa!

This book provides critically important information for designing and building reliable cost-effective products. It includes numerous example problems with solutions.

Kategorie:
Technologie
Kategorie BISAC:
Technology & Engineering > Electronics - Circuits - General
Technology & Engineering > Quality Control
Science > Fizyka
Wydawca:
Springer
Język:
Angielski
ISBN-13:
9783319936826
Rok wydania:
2019
Wydanie:
2019
Ilość stron:
463
Waga:
0.84 kg
Wymiary:
23.39 x 15.6 x 2.69
Oprawa:
Twarda
Wolumenów:
01
Dodatkowe informacje:
Wydanie ilustrowane

"Reliability Physics and Engineering: Time-to-Failure Modeling ... presents good technical insights into advance reliability physics theories and modeling, suitable for both industry and academic practitioners. The authors provide insights into the broad values and technical applications of reliability and safety engineering in this book. ... Valuable as a learning tool reliability physics and modeling, its clear relevance to real-world industry practices make it useful for both academics and semiconductor industry practitioners." (Chong Leong Gan, Life Cycle Reliability and Safety Engineering, Vol. 9, 2020)

 

J.W. McPherson is recognized internationally as an expert in Reliability Physics & Engineering. He has published over 200 papers on reliability, authored the Reliability Chapters for 4 Books, awarded 15 patents, and holds the title of Texas Instruments Senior Fellow Emeritus. He was the 1995 General Chairman of the IEEE International Reliability Physics Symposium and still serves on its Board of Directors. In 2004, Joe received the IEEE Engineer of the Year Award from the Texas Society of Professional Engineers. In 2006, he was the Chairman of the International Sematech Reliability Council. Joe is an IEEE Fellow and the Founder/CEO of McPherson Reliability Consulting, LLC. His semiconductor reliability expertise includes device-physics, design-in reliability, wafer-fabrication and assembly-related reliability issues. Several of the reliability models that are used today in the semiconductor industry are closely associated with his name.

This third edition textbook provides the basics of reliability physics and engineering that are needed by electrical engineers, mechanical engineers, civil engineers, biomedical engineers, materials scientists, and applied physicists to help them to build better devices/products. The information contained within should help all fields of engineering to develop better methodologies for: more reliable product designs, more reliable materials selections, and more reliable manufacturing processes— all of which should help to improve product reliability. A mathematics level through differential equations is needed. Also, a familiarity with the use of excel spreadsheets is assumed. Any needed statistical training and tools are contained within the text. While device failure is a statistical process (thus making statistics important), the emphasis of this book is clearly on the physics of failure and developing the reliability engineering tools required for product improvements during device-design and device-fabrication phases.


  • Provides a comprehensive textbook on reliability physics of semiconductors, from fundamentals to applications;
  • Explains the fundamentals of reliability physics and engineering tools for building better products;
  • Contains statistical training and tools within the text;
  • Includes new chapters on Physics of Degradation, and Resonance and Resonance-Induced Degradation.




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