QUANTUM MECHANICAL EFFECTS ON MOSFET SCALING LIMIT : Challenges and Opportunies for Nanoscale CMOS

ISBN-13: 9783836461832 / Angielski / Miękka / 2009 / 196 str.

Lihui Wang

Opis

As CMOS technology continuous to be aggressivelyscaled, it approaches a point where classical physicsis insufficient to explain the behavior of a MOSFET.At this classical physics limit, a quantum mechanicalmodel becomes necessary to provide thoroughassessment of the device performance and scaling.This book describes advanced modeling of nanoscalebulk MOSFETs incorporating critical quantummechanical effects such as gate direct tunneling andenergy quantization of carriers.The models derived here are used to project MOSFETscaling limits. These limits of bulk MOSFETs arepredicted according to various criteria, includingcircuit power and delay, device leakage current andthe system uniformity requirement. Tunneling andquantization effects cause large power dissipation,low drive current, and strong sensitivities toprocess variation, which greatly limit CMOS scaling.Developing new materials and structures is imminentto extend the scaling process.

O autorze

Lihui Wang received the Ph.D. degree from the Georgia Institute
of Technology in 2006. His doctoral research focused on the
quantum mechanical effects in MOSFET devices. He is currently a
Senior Device Engineer in National Semiconductor Corporation. His
research interest is on-chip electrostatic discharge protection
design.