Progress in Nano-Electro Optics IV: Characterization of Nano-Optical Materials and Optical Near-Field Interactions

ISBN-13: 9783540232360 / Angielski / Twarda / 2005 / 208 str.

M. Ohtsu; Motoichi Ohtsu

Opis

This volume focuses on the characterization of nano-optical materials and optical near-field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.

Spis treści

Near-Field Imaging of Magnetic Domains.- Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization.- Recombination Dynamics in InxGa1™xN-Based Nanostructures.- Quantum Theory of Radiation in Optical Near Field Based on Quantization of Evanescent Electromagnetic Waves Using Detector Mode.

O autorze

Dr. M. Ohtsu is currently a professor of The University of Tokyo. He is also a project leader of SORST Nanophotonics Team, Japan Science and TechnologyAgency. He has been a president of IEEE LEOS Japan Chapter. He has also been a member of the board of directors, Japan Society of Applied Physics. He is a fellow of Optical Society of America.