Polycrystalline Semiconductors II: Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30–August 3,1990

ISBN-13: 9783642763878 / Angielski / Miękka / 2011 / 549 str.

Jürgen H. Werner;Horst P. Strunk

Opis

This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het erointerfaces - (POLYSE '90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions."

Spis treści

I Dislocations: Structure.- Dislocations in Semiconductors.- TEM Investigations of Dislocations in Annealed Multicrystalline Silicon.- The Dissociation of Dislocations in SixGe1—x Alloys.- II Dislocations: Optical and Electronic Properties.- Dislocation-Related Excitons in Semiconductors.- DC Conduction Along Dislocations in Semiconductors.- Dislocation Luminescence in Zinc Selenide.- Origin of the D-Band Photoluminescence in Silicon.- Electronic States on Dislocations in Semiconductors and the Optical Spectrum Peculiarities.- III Beam Induced Characterization.- Characterization of Grain Boundaries by the Electron Beam Induced Current Method.- EBIC Contrast of Grain Boundaries in Polycrystalline Silicon Solar Cells.- The Electrical Activity of Dislocations in the Presence of Transition Metal Contaminants.- In-Plane Investigation of Grain Boundary Recombination Strength in Silicon Bicrystals.- EBIC Investigations of Grain Boundaries in Polycrystalline Silicon.- Bright EBIC Contrast of Crystal Defects in Silicon.- Structural and Electrical Characterization of Hot Pressed Grain Boundaries in Silicon by EBIC and TEM.- Photoacoustic Microscopy of Semiconductor Structures Using Piezoelectric Detection.- IV Grain Boundaries: Theory.- Grain Boundaries in Elemental and Compound Semiconductors.- The Atomic and Electronic Structures of Grain Boundaries in Silicon-Carbide and Silicon.- Broken Bond Centers Within Grain Boundaries and Dislocations in Silicon and Germanium.- Theoretical Studies of Grain Boundary Electronic Properties of Silicon: Effect of Impurity Segregation.- Classification of Grain Boundary Activity in Semiconductors.- V Grain Boundaries in Silicon: Structure, Chemistry and Transport.- Multicrystalline Silicon and Highly Efficient Solar Cells.- Microstructure and Electrical Properties of Grain Boundaries in Elemental Semiconductors.- Surface and Internal Surface Effects in Polycrystalline Semiconductors.- Interactions of Grain Boundaries, Dislocations and Dissolved Impurities in Multicrystalline Silicon Wafers.- Deep Level Centers in Au-Doped Polycrystalline Silicon.- Energy Calculation of the ?9 Twist Grain Boundary in Silicon.- Dependence of Grain Boundary Recombination Velocity on Density, Energy, and Capture Cross Section of Boundary Traps.- Influence of Some Physical and Chemical Parameters on the Recombining Activity of Dislocations in Silicon.- Effect of Surface Oxidation on Polycrystalline Silicon for Photovoltaic Application.- VI Gettering and Hydrogen Passivation in Silicon.- Gettering Processes in Polycrystalline Silicon.- Classical and Rapid Thermal-Process-Induced Gettering in Multicrystalline Silicon.- The Efficiency of Dislocations as Sinks for Silicon Self-Interstitials in Ribbon-Grown Polycrystalline Silicon.- Constrictions in the Split Dislocations as a Tool to Study Dislocation Gettering Activity in Silicon.- Gettering Phenomena and Dislocation Kink Mobility.- Effective Lifetime Improvement by Phosphorus and Chlorine Gettering in Polycrystalline EFG Silicon Ribbons.- Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon.- A Simple H-Passivation Technique for High Performance Low Temperature Poly-Si TFTs.- VII Polycrystalline Material for Microelectronic Devices.- Polysilicon Layers in Modern Microelectronic Devices.- Electronic Properties and Novel Growth Techniques of Polysilicon Thin Films.- Development and Properties of Undoped Polycrystalline Thin Film Transistors.- Effect of Si Implantation Condition on the Performance of Polycrystalline Si Thin-Film Transistors.- Limited Reaction Processing of Silicon Layers for Thin Film Transistors and Polysilicon Emitter Bipolar Transistors.- Performance of Thin-Film Transistors Fabricated from Undoped Low Pressure Chemical Vapour Deposited Polycrystalline Silicon in Relation to the Growth Pressure.- Lateral Polysilicon n+p Diodes: Effect of the Grain Boundaries and of the p-Implanted Doping Level on the I—V and C—V Characteristics.- Effect of Doping Concentration and Active Layer Thickness on the Electrical Behaviour of Polysilicon Thin Film Transistors.- VIII Silicon Crystallization.- Laser Crystallization of Amorphous Silicon on Insulating Substrates.- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs.- Suppression of Grain Boundary Formation During Laser Recrystallization of Thin Si-Films Using Micro Absorbers.- Silicon Liquid Phase Lateral Epitaxy by Pulsed Heating on an Insulating Structure with Seeding Windows.- IX Non-silicon Polycrystalline Materials.- Modelling of the Temperature Dependence of the Vacuum Electrical Resistance of Polycrystalline CdSe Films Between 360 and 620 K.- Hopping Conduction in Screen-Printed CdS:Cl.- An Isoelectronic Complex in Screen-Printed CdTe:Cl.- Optical Spectroscopy of Polycrystalline Materials: Theory and Experiments on Group IV Materials.- Material Characterization by Far-Infrared Magneto-Optical Absorption in Polycrystalline InP.- Semiconducting Properties of Ferrimagnetic Spinels Cu0.45Co0.55Cr2S4—xSex(0.0 ? x ? 1.5).- Optical and Electronic Properties of MoSe2 Thin Films Prepared by Soft Selenization.- Thermoelectric Application of Sintered Iron Disilicide.- Total Yield Photoemission Study of Heavily n- and p-Doped Glow Discharge Prepared Microcrystalline Silicon.- Synthesis of A1-Y Alloy Films for ULSI Metallization.- X New Solar Cell Materials.- Non-conventional Semiconductor Materials for Solar Cells.- Analysis of Growth Structures of Polycrystalline Chalcogenide Thin Films by X-Ray Diffraction.- Microstructure of Polycrystalline CuInSe2 in Solar Cell Material: Cross-Sectional Transmission Electron Microscopy Studies.- XPS Characterization of Co-evaporated CuInSe2 Thin Films.- Aggregate Structure and Adhesion Problems in CuIn(Ga)Se2 Films.- Microscopic Model for Electronic Effects of Surface Interaction Between Chalcogenide Semiconductors and Oxygen.- Preparation of Zinc Phosphide Films by Reactive Radio Frequency Sputtering.- XI Heterointerfaces: Structure.- Nucleation and Propagation of Misfit Dislocations in Strained Epitaxial Layer Systems.- Interfacial and Epilayer Defects in Semiconductor Heterostructures: The Case of GaAs/Si and GaSb/GaAs.- A Continuum Mechanics Approach to the Thermal Deformation of GaAs/Si Heterojunctions.- Electron Microscopical Investigations of Heteroepitaxial CdTe/GaAs.- Defect Processes During the Growth of Ge on Si by Liquid Phase Epitaxy.- XII Heterointerfaces: Devices.- Defect Related Issues in the Application of Si/Si1—x Gex Structures.- Chemical Ordering in Si1—x Gex Alloys and Si-Ge Strained-Layer Superlattices.- Polycrystalline Silicon Carbide Emitters for Heterojunction Bipolar Transistors.- The Effect of Interface Defects on the Optoelectronic Properties of n-VI Heterojunctions.- Deep Centers in AlGaAs Heteroepitaxial Diodes.- Index of Contributors.- Materials Index.