Physics of Semiconductor Devices

ISBN-13: 9783319631530 / Angielski / Twarda / 2017 / 920 str.

Massimo Rudan

Opis

This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.

Spis treści

Part I A Review of Analytical Mechanics and Electromagnetism.- Analytical Mechanics.- Coordinate Transformations and Invariance Properties.- Applications of the Concepts of Analytical Mechanics.- Electromagnetism.- Applications of the Concepts of Electromagnetism.- Part II Introductory Concepts to Statistical and Quantum Mechanics.- Classical Distribution Function and Transport Equation.- From Classical Mechanics to Quantum Mechanics.- Time-Independent Schrodinger Equation.- Time-Dependent Schrodinger Equation.- General Methods of Quantum Mechanics.- Part III Applications of the Schrodinger Equation.- Elementary Cases.- Cases Related to the Linear Harmonic Oscillator.- Other Examples of the Schrodinger Equation.- Time-Dependent Perturbation Theory.- Part IV Systems of Interacting Particles - Quantum Statistics.- Many-Particle Systems.- Separation of Many-Particle Systems.- Part V Applications to Semiconducting Crystals.- Periodic Structures.- Electrons and Holes in Semiconductors at Equilibrium.- Part VI Transport Phenomena in Semiconductors.- Mathematical Model of Semiconductor Devices.- Generation-Recombination and Mobility.- Part VII Basic Semiconductor Devices.- Bipolar Devices.- MOS Devices.- Part VIII Miscellany.- Thermal Diffusion - Ion Implantation.- Thermal Oxidation - Layer Deposition.- Measuring the Semiconductor Parameters.- 

O autorze

Massimo Rudan received a degree in Electrical Engineering in 1973 and a degree in Physics in 1976, both from the University of Bologna, Italy. His research interests are in the field of physics of carrier transport and numerical analysis of semiconductor devices. In 1986, he was a visiting scientist, on a one-year assignment, at the IBM Thomas J. Watson Research Center at Yorktown Heights, NY, studying the discretization techniques for the higher-order moments of the Boltzmann Transport Equation. 

From 1979, he has been teaching annual courses in the Faculty of Engineering of the University of Bologna, firstly as Lecturer and then as Associate Professor. In 1990, he became Full Professor of Microelectronics at the University of Bologna. An IEEE Fellow (2008) and Life Fellow (2014), M.R. is author, coauthor or editor of 12 books, and has authored or coauthored about 250 technical papers published in major journals, or presented in international conferences, in the fields of electronics, solid-state physics, and solid-state sensors.

M.R. has coordinated several research projects funded by the European Commission, international Companies and Foundations, the National Council of Research, and the National Ministry of University and Research. In 2001, he was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna.

Blurb

This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation.  Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation.  Examples are based on silicon due to its industrial importance.  Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.

• Provides a comprehensive textbook describing the physics of semiconductors, from fundamentals to applications;
  
• Proceeds from first principles to description of actual devices’ behavior;
  
• Written to be accessible, including mathematical derivations and explicit calculations, without being wordy;
  
• This new edition includes numerous new exercises and explanatory figures, as well as a variety of new material and improvements to the existing content.