Physics of Semiconductor Devices

ISBN-13: 9781119429111 / Angielski / Twarda / 2021 / 944 str.

Murray Hill Lucent Technologies Kwok K. (Bell Laboratories

Spis treści

Introduction 1Part I Semiconductor PhysicsChapter 1 Physics and Properties of Semiconductors--A Review 71.1 Introduction, 71.2 Crystal Structure, 81.3 Energy Bands and Energy Gap, 111.4 Carrier Concentration at Thermal Equilibrium, 151.5 Carrier-Transport Phenomena, 261.6 Phonon, Optical, and Thermal Properties, 471.7 Heterojunctions and Nanostructures, 521.8 Basic Equations and Examples, 60Part II Device Building BlocksChapter 2 p-n Junctions 792.1 Introduction, 792.2 Depletion Region, 802.3 Current-Voltage Characteristics, 912.4 Junction Breakdown, 1022.5 Transient Behavior and Noise, 1152.6 Terminal Functions, 1192.7 Heterojunctions, 126Chapter 3 Metal-Semiconductor Contacts 1363.1 Introduction, 1363.2 Formation of Barrier, 1373.3 Current Transport Processes, 1553.4 Measurement of Barrier Height, 1733.5 Device Structures, 1833.6 Ohmic Contact, 190Chapter 4 Metal-Insulator-Semiconductor Capacitors 2004.1 Introduction, 2004.2 Ideal MIS Capacitor, 2014.3 Silicon MOS Capacitor, 2144.4 Carrier Transport in MOS Capacitor, 241Part III TransistorsChapter 5 Bipolar Transistors 2635.1 Introduction, 2635.2 Static Characteristics, 2645.3 Compact Models of Bipolar Transistors, 2835.4 Microwave Characteristics, 2935.5 Related Device Structures, 3065.6 Heterojunction Bipolar Transistor, 3125.7 Self-Heating Effects, 318Chapter 6 MOSFETs 3296.1 Introduction, 3296.2 Basic Device Characteristics, 3346.3 Nonuniform Doping and Buried-Channel Device, 3606.4 Device Scaling and Short-Channel Effects, 3736.5 MOSFET Structures, 3916.6 Circuit Applications, 4036.7 NCFET and TFET, 4086.8 Single-Electron Transistor, 414Chapter 7 Nonvolatile Memory Devices 4347.1 Introduction, 4347.2 The Concept of Floating Gate, 4357.3 Device Structures, 4407.4 Compact Model of Floating-Gate Memory Cells, 4477.5 Multi-Level Cells and 3-Dimensional Structures, 4507.6 Applications and Scaling Challenges, 4637.7 Alternative Structures, 467Chapter 8 JFETs, MESFETs, and MODFETs 4868.1 Introduction, 4868.2 JFET and MESFET, 4878.3 MODFET, 511Part IV Negative-Resistance and Power DevicesChapter 9 Tunnel Devices 5399.1 Introduction, 5399.2 Tunnel Diode, 5409.3 Related Tunnel Devices, 5549.4 Resonant-Tunneling Diode, 571Chapter 10 IMPATT Diodes, TED and RST Devices 58510.1 Introduction, 58510.2 IMPATT Diodes, 58610.3 Transferred-Electron Devices, 61610.4 Real-Space-Transfer Devices, 636Chapter 11 Thyristors and Power Devices 64911.1 Introduction, 64911.2 Thyristor Characteristics, 65011.3 Thyristor Variations, 67011.4 Other Power Devices, 676Part V Photonic Devices and SensorsChapter 12 LEDs and Lasers 69712.1 Introduction, 69712.2 Radiative Transitions, 69812.3 Light-Emitting Diode (LED), 70312.4 Laser Physics, 71512.5 Laser Operating Characteristics, 72312.6 Specialty Lasers, 742Chapter 13 Photodetectors and Solar Cells 75513.1 Introduction, 75513.2 Photoconductor, 75913.3 Photodiodes, 76213.4 Avalanche Photodiode, 77213.5 Phototransistor, 78213.6 Charge-Coupled Device (CCD), 78513.7 Metal-Semiconductor-Metal Photodetector, 79913.8 Quantum-Well Infrared Photodetector (QWIP), 80213.9 Solar Cell, 806Chapter 14 Sensors 83514.1 Introduction, 83514.2 Thermal Sensors, 83714.3 Mechanical Sensors, 84314.4 Magnetic Sensors, 85214.5 Chemical Sensors, 86214.6 Biosensors, 867Appendixes 875A. List of Symbols, 877B. International System of Units, 887C. Unit Prefixes, 888D. Greek Alphabet, 889E. Physical Constants, 890F. Properties of Important Semiconductors, 891G. The Bloch Theorem and the Periodic Energy in the Reciprocal Lattice, 892H. Properties of Si and GaAs, 894I. The Derivations of Boltzmann Transport Equation andHydrodynamic Model, 895J. Properties of SiO2 and Si3N4, 901K. Compact Models of Bipolar Transistors, 902L. Discovery of the Floating-Gate Memory Effect, 910Index 913

O autorze

S. M. SZE, PHD, is Honorary Chair Professor, College of Electrical and Computer Engineering, National Chiao Tung University, Taiwan. He has made fundamental and pioneering contributions to semiconductor devices, particularly his co-discovery of the floating-gate memory (FGM) effect that has ushered in the Fourth Industrial Revolution. Dr. Sze has authored, co-authored, and edited more than 400 papers and 16 books. He is a celebrated Member of IEEE, an Academician of Academia Simica, and a member of the US National Academy of Engineering.YIMING LI, PHD, is Full Professor of Electrical and Computer Engineering at National Chiao Tung University, Taiwan. He has been a Visiting Professor in Stanford University, Grenoble INP, and Tohoku University. He has published more than 300 technical articles in journals, conferences, and book chapters. Dr. Li is an active member of IEEE and has served on technical committees for many international professional conferences including IEDM. He is the recipient of the Pan Wen-Yuan Foundation's Research Fellowship Award and the Chinese Institute of Electrical Engineering's Outstanding Young Electrical Engineer Award.KWOK K. NG, PHD, is now serving on the Industry Advisory Board of the ECE Department of Wayne State University, USA, and as Adjunct Professor at National Chiao Tung University, Taiwan. He joined Bell Telephone Laboratories in 1980, and continued in its spin-offs Lucent Technologies and Agere Systems. He was with SRC (Semiconductor Research Corp.) from 2007 to 2019. Dr. Ng is an IEEE Life Fellow and former Editor of IEEE Electron Device Letters. He is author of numerous publications, including the book Complete Guide to Semiconductor Devices.