Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

ISBN-13: 9780128197172 / Angielski / Miękka / 2020 / 356 str.

Su-Ting Han; Ye Zhou

Spis treści

1. Introduction to photo-electroactive non-volatile memory 2. Characteristics and mechanisms in resistive switching memories 3. Memory characteristics and mechanisms in transistor based memories 4. Two-terminal optoelectronic memory device 5. Three-terminal optoelectronic memory device 6. Synaptic devices based on organic field-effect transistors 7. Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications 8. One-dimensional materials for photo-electroactive memories and synaptic devices 9. Novel photo-electroactive memories and neuromorphic devices based on nanomaterials 10. Organic and Hybrid Photo-Electroactive Polymer for Memories and Neuromorphic Computing 11. Metal oxide materials for photo-electroactive memories and neuromorphic computing systems 12. Perovskites for photo-tunable memories and neuromorphic computing 13. Chalcogenide materials for optoelectronic memory and neurmorphic computing 14. Device challenges, possible strategies and conclusions

O autorze

Su-Ting Han is an Associate Professor at the Institute of Microscale Optoelectronics, Shenzhen University, China. She received her MSc degree in Analytical Chemistry from Hong Kong Baptist University and her PhD degree in Physics and Materials Science from City University of Hong Kong. Her research interests include functional electronic devices and flexible, stretchable, and wearable electronics. Ye Zhou is an IAS Fellow in the Institute for Advanced Study, Shenzhen University. His research interests include flexible and printed electronics, organic/inorganic semiconductors, surface and interface physics, nanostructured materials, and nano-scale devices for technological applications, such as logic circuits, data storage, photonics and sensors.