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Kategorie szczegółowe BISAC

Open Source Tcad/Eda for Compact Modeling

ISBN-13: 9789402410891 / Angielski / Twarda / 2026

Wladyslaw Grabinski; Daniel Tomaszewski
Planowany termin premiery książki: 10-10-2026
Jeśli chcesz zamówić tę książkę skontaktuj się z nami.

Powiadom mnie, gdy książka będzie dostępna.
Open Source Tcad/Eda for Compact Modeling Grabinski, Wladyslaw 9789402410891 Springer - książkaWidoczna okładka, to zdjęcie poglądowe, a rzeczywista szata graficzna może różnić się od prezentowanej.

Open Source Tcad/Eda for Compact Modeling

ISBN-13: 9789402410891 / Angielski / Twarda / 2026

Wladyslaw Grabinski; Daniel Tomaszewski
Planowany termin premiery książki: 10-10-2026
Jeśli chcesz zamówić tę książkę skontaktuj się z nami.

Powiadom mnie, gdy książka będzie dostępna.
cena promocyjna 682,99
(netto: 650,47 VAT:  5%)
718,94
Rabat: -5%

Najniższa cena z 30 dni: 718,94
Książka dostępna od:
10-10-2026


Darmowa dostawa!
Kategorie:
Technologie
Kategorie BISAC:
Technology & Engineering > Electronics - Circuits - General
Science > Physics - Condensed Matter
Computers > Artificial Intelligence - Expert Systems
Wydawca:
Springer
Seria wydawnicza:
Springer Series in Advanced Microelectronics
Język:
Angielski
ISBN-13:
9789402410891
Rok wydania:
2026
Wydanie:
2021
Numer serii:
000142796
Oprawa:
Twarda
Wolumenów:
01

Preface.

Introduction: Wladek Grabinski, GMC Suisse, Daniel Tomaszewski, ITE Warsaw

Chapter 1: Numerical Cogenda TCAD MOSFET Device Simulations.
Tutorial to Genius Device Simulator. Physics of Device Simulation. Numerical Method in Device Simulation. Device simulation: A MOS example.

Chapter 2: Semiconductor Device Simulation Using DEVSIM; Juan E. Sanchez.
Introduction. BJT Physics. BJT Simulation. Conclusion and Future Work.

Chapter 3: Device Level Parameter Extraction; Daniel Tomaszewski, Wladek Grabinski.
Introduction. Parameter extractors overview. General optimization algorithms. Profile1d: open source extractor. Examples: Diode, MOSCAP, BJT, MOSFET, IC Subcircuit. Summary. Appendix: List Profile1d  commands.

Chapter 4: Schematic entry and circuit simulation with Qucs; Mike Brinson.
Introduction. The Qucs graphical user interface. Basic principles of circuit schematic capture. Qucs parameter sweep techniques. Qucs small signal AC circuit and noise simulation. Qucs transient simulation. Qucs subcircuits. Including SPICE netlists in Qucs schematic diagrams. Qucs post-simulation data processing. Summary.

Chapter 5: Qucs modeling and simulation of analog/RF devices and circuits; Mike Brinson.
Introduction. Circuit and system modeling using macromodels. Qucs equation-defined device models. Qucs and QucsStudio compact model development with the ADMS Verilog-A model synthesizer/compiler. QucsStudio implementation. More RF examples. From Qucs to QucsStudio: future directions in analog simulation and device modeling.

Summary

Chapter 6: Simulations of Digital IC Blocks; Zia Abbas, Antonio Mastrandrea, Francesco Menichelli and Mauro Olivieri.
Basics on Nano-scale Digital CMOS Analysis: Propagation Delay and Static Power. Basic Ngspice Delay and Leakage Current Analysis. Automated Delay Characterization of CMOS Standard Cells. Automated Leakage Current Characterization In CMOS Standard Cells. Additional Material.

Chapter 7: Hybrid TCAD Circuit Simulations.

Chapter 8: Standardized Data Exchange For Device Modeling Tools; Franz Sischka.
General Requirements For A Data Format Standard. Most Common Measurement Data Formats For Device Modeling. MDM (Measured Data Management) Format. Summary.

Index.

Wladek Grabinski received the Ph.D. degree from the Institute of Electron Technology, Warsaw, Poland, in 1991. From 1991 to 1998 he was a Research Assistant at the Integrated Systems Lab, ETH Zürich, Switzerland, supporting the CMOS and BiCMOS technology developments by electrical characterization of the processes and devices. From 1999 to 2000, he was with LEG, EPF Lausanne, and was engaged in the compact MOSFET model developments supporting numerical device simulation and parameter extraction. Later, he was a technical staff engineer at Motorola, and subsequently at Freescale Semiconductor, Geneva Modeling Center, Switzerland. He is now an consultant responsible for modeling, characterization and parameter extraction of MOS transistors for the design of RF CMOS circuits. He is currently consulting on the development of next-generation compact models for the 65–32-nm-technology very large scale integration (VLSI) circuit simulation. His current research interests are in high-frequency characterization, compact modeling and its Verilog-A standardization as well as device numerical simulations of MOSFETs for analog/RF low power applications. He is an editor of the reference modeling book Transistor Level Modeling for Analog/RF IC Design and also authored or coauthored more than 50 papers. Wladek has served as a member in IEEE EDS Compact Modeling Committee, organization committee of ESSDERC/ESSDERC, TPC of SBMicro, SISPAD, MIXDES Conferences. He also serves as European representative for the ITRS Modeling and Simulation working group. Wladek is involved in activities of the MOS-AK/GSA compact modeling group and serves as a coordinating manager since 1999.

The aim of this book is to highlight the benefits of a higher interoperability between Technology Computer-Aided Design and Electronic Design Automation, focusing on specifically selected open source tools for compact modeling.

 

Due to the tremendous developments in semiconductor technology in recent years, device level modelling and integrated circuit design have become intimately related. However, they have been traditionally disconnected up to the circuit level. This book consists of a set of extended user manuals guiding the reader from the usual software, from multidimensional numerical process and device simulations, through compact model development and its Verilog-A standardization to carefully selected IC designs for analog, radio frequency and digital applications.

 

Bringing together contributions from academic and industrial researchers and engineers, the book forms a valuable reference for students and those working in the field.



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